个人简介
窦保英，博士，副研究员，硕士生导师。2023年博士毕业于中国工程物理研究院北京计算科学研究中心，同年入职河南大学未来技术学院。主要从事半导体缺陷的第一性原理计算研究，主持国家自然科学基金青年项目、理论物理专款项目等多项国家级科研项目。
欢迎对凝聚态物理、第一性原理计算、机器学习、计算材料等方向感兴趣的研究生和本科生加入本团队。
教育和工作经历
2025.12-至今，河南大学未来技术学院，副研究员
2023.12-2025.12，河南大学未来技术学院，助理教授
2018.9-2023.6，中国工程物理研究院北京计算科学研究中心，凝聚态物理，博士（导师：魏苏淮教授）
2022.1-2023.1，德国马克斯普朗克钢铁研究所，联合培养博士生（导师：Christoph Freysoldt & Jörg Neugebauer教授）
2014.9-2018.6,东北师范大学，物理学，本科
研究方向
结合第一性原理计算与机器学习，围绕半导体中的缺陷物理与掺杂机制开展研究，重点关注光伏/光电材料中的缺陷调控与载流子复合动力学，以及自旋量子缺陷的筛选与设计。
代表论文
1. Y. Guan, L. Huang*, and B. Dou*, Mitigation of nonradiative recombination by enhanced anharmonic lattice relaxation in mixed-anion perovskites, Phys. Rev. Appl. 23, 014065 (2025).
2. B. Dou, X. Cai, and S.-H. Wei*, Origin of hole density pinning in group-V doped CdTe, Phys. Rev. B 109, 205205 (2024).
3. B. Dou, S. Falletta, J. Neugebauer, C. Freysoldt*, X. Zhang*, and S.-H. Wei*, Nonradiative recombination in Cu(In,Ga)Se2 alloys, Phys. Rev. Appl. 19, 054054 (2023). [编辑推荐论文]
4. B. Dou, Q. Sun, and S.-H. Wei*, Effects of co-doping in semiconductors: CdTe, Phys. Rev. B 104, 245202 (2021).
5. B. Dou, Q. Sun*, and S.-H. Wei*, Optimization of doping CdTe with group-elements: A first-principles study, Phys. Rev. Appl. 15, 054045 (2021).
6. A. Zhang, H. Xu, H. Li, B. Dou, C. Liu, W. Ding, Q. Wen, W. Wang, Theoretical insight into the strategy for high electron carrier concentration in Bi2WO6 with intrinsic point defects, Phys. Rev. B 113, 125203 (2026).
7. A. Zhang, H. Li, H. Xu, B. Dou, G. Zhang, W. Wang, Optimizing the n-type carrier concentration of an InVO4 photocatalyst by codoping with donors and intrinsic defects, Phys. Rev. Appl. 22, 044047 (2024).
8. X. Chen, Z. Huang, Z. Gan, B. Dou, Y. Wang, X. Zhang, C. Yan, Passivating Deep-Level Defects with Ag Alloying to Enhance the Efficiency of Cu(In,Ga)(S,Se)2 Solar Cells, J. Phys. Chem. C 129, 8537 (2025).
9. I. Chatratin*, B. Dou, S.-H. Wei, and A. Janotti*, Doping limits of phosphorus, arsenic, and antimony in CdTe, J. Phys. Chem. Lett. 14, 273 (2023).
10. A. Nagaoka*, K. Kimura, A. K. R. Ang, Y. Takabayashi, K. Yoshino, Q. Sun, B. Dou, S.-H. Wei, et al., Direct observation of group-V dopant substitutional defects in CdTe single crystals, J. Am. Chem. Soc. 145, 9191 (2023).
11. Y. Song*, G. Zhang, X. Cai, B. Dou, S.-H. Wei*, et al., General model for defect dynamics in ionizing-irradiated SiO2-Si structures, Small 18, 2107516 (2022).
12. T. Shen, K. Yang, B. Dou, S.-H. Wei, Y. Liu, and H.-X. Deng*, Clarification of the relative magnitude of exciton binding energies in ZnO and SnO2, Appl. Phys. Lett. 120, 042105 (2022).
13. R. Wang, B. Dou, Y. Zheng, and S.-H. Wei*, Investigation of Ag(Ga,In)Se2 as thin-film solar cell absorbers: A first- principles study, Sci. China Phys. Mech. Astron. 65, 107311 (2022).
14. S. W. Fan*, L. Yang, Y. Chen, and B. Dou, The origin of the p-type conductivity for Cu and Ag-doped NiO: Density functional theory study, Mater. Today Commun. 33, 104552 (2022).
